1. General information about the module
Module code: PET10123
Vietnamese module designation: TỪ HỌC – LINH KIỆN SPINTRONIC
English module designation: Magnetism & Spintronic Devices
Credit points: 3
Workload:
- Contact Hours: Lectures, lessons: 30 hours (in class)
- Lab works, project, seminar: 30 hours
- Exercise: 0 hours
- Private study: 90 hours
Type of module: Specialized
Required and recommended prerequisites for joining the module: None
Modules taken before this module: None
2. Module objectives/intended learning outcomes
This course provides students with a foundational understanding of magnetism, including magnetic moments, magnetic exchange interactions, magnetic anisotropy, magnetic domains and domain walls, and magnetic hysteresis (M–H loops). It also introduces key spintronic phenomena, including anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), the planar and anomalous Hall effects (PHE/AHE), the spin Hall effect (SHE), the Rashba–Edelstein effect, spin pumping, and the spin Seebeck effect.
The device-oriented component focuses on advanced spintronic devices, including magnetoresistive (MR) and Hall sensors, spin-transfer torque magnetic random-access memory (STT-MRAM), spin–orbit torque magnetic random-access memory (SOT-MRAM), synthetic antiferromagnets (SAFs), perpendicular magnetic tunnel junctions (pMTJs), Dzyaloshinskii–Moriya interaction (DMI) and chiral magnetic structures such as domain walls and skyrmions, antiferromagnetic and altermagnetic materials, two-dimensional (2D) and topological materials, magnonics, spin-torque nano-oscillators (STNOs), and emerging neuromorphic spintronics.