Trần Xuân Bảo Ph.D

Full Name: Tran Xuan Bao
Academic Degree: Ph.D.

Education

▪ Ph.D., Daegu Gyeongbuk Institute of Science and Technology (DGIST), South Korea, 2024.

Phone: +84 98 286 02 85
Email: txbao@hcmus.edu.vn

1. Research Areas

▪ Semiconductor technology, photolithography, and microfabrication of thin-film devices.

▪ Thin-film materials and spintronic devices for MRAM (Magnetoresistive Random-Access Memory), logic, and information-processing applications.

▪ Spintronics and physics of low-dimensional magnetic systems, including spin dynamics, spin–orbit interactions, skyrmions, and related quantum effects.

2. Research Activities

▪ Development of photolithography systems and microfabrication processes for micrometer-scale structures.

▪ Fabrication and investigation of thin-film devices, Hall structures, and spintronic devices.

▪ Investigation of the formation, control, and dynamics of magnetic states, ranging from domain walls and skyrmions to magnetic switching and spin transport.

▪ Mentor of student teams participating in the Smart City IC Design Competition 2026 and the Intel AI Global Impact Festival 2026, with projects on AHE-MagSense and AI applications in photolithography and semiconductor technology.

3. Research Projects

▪ T2025-48: “Ion-Controlled Magnetism in Magnetic Multilayer Thin Films,” Principal Investigator, 2025–2026.

▪ CB2025-18-15: “Control of Magnetism in Multilayer Material Structures,” Principal Investigator, 2025–2026.

4. Courses Taught

▪ General Physics II.

▪ Magnetism and Spintronic Devices.

▪ Computer Applications in Specialized Research.

▪ Photolithography Techniques (Graduate Level).

5. Selected Publications

1. Won-Chang Choi, Tae-Bo Sim, Kwonjin Park, Tae-Hwan Kim, Soobeom Lee, Bao Xuan Tran, Soojung Kim, Chun-Yeol You và Jung-Il Hong. “Electrical Tuning of Ferrimagnetic Spin Alignment Angle and Compensation Temperature in Pt/IrMn3/CoGd Multilayers.” Advanced Functional Materials (2026).
2. Minh-Anh Tran Nguyen, Taegi Kim, Bao Xuan Tran, Thi Huong Nguyen, Van Quang Nguyen, The Long Phan, Duong Van Thiet, Anh Tuan Duong, Cao Khang Nguyen và Sunglae Cho. “Tailoring Structural Phase Stability and Charge Transport in FeSe Epitaxial Films by Se Flux Engineering.” Journal of Solid State Chemistry 364, 126301 (2026). DOI: 10.1016/j.jssc.2026.126301.
3. B. X. Tran, J. H. Ha, W. C. Choi, S. Yoon, T. H. Kim và J. I. Hong. “Field-Free Control and Switching of Perpendicular Magnetization by Voltage Induced Manipulation of RKKY Interaction.” Applied Physics Letters 124, 112409 (2024). DOI: 10.1063/5.0176620.
4. B. X. Tran, S. Yang, H. J. Kim, J. H. Ha, S. Yoon, C. Kim, K. W. Moon, W. C. Choi, C. Hwang và J. I. Hong. “Electrical Manipulation of Oxygen Ion Migrations for the Voltage-Controlled Adjustment of Magnetic Anisotropy and Optimized Skyrmion Generations.” Advanced Electronic Materials 8, 2200770 (2022).
5. H. J. Kim, K. W. Moon, B. X. Tran, S. Yoon, C. Kim, S. Yang, J. H. Ha, K. An, T. Ju, J. I. Hong và C. Hwang. “Field-Free Switching of Magnetization by Tilting the Perpendicular Magnetic Anisotropy of Gd/Co Multilayers.” Advanced Functional Materials 32, 2112561 (2022).
6. S. Yang, K. W. Moon, T. S. Ju, C. Kim, H. J. Kim, J. Kim, B. X. Tran, J. I. Hong và C. Hwang. “Electrical Generation and Deletion of Magnetic Skyrmion-Bubbles via Vertical Current Injection.” Advanced Materials 33, 2104406 (2021).
7. H. J. Kim, S. G. Je, K. W. Moon, W. C. Choi, S. Yang, C. Kim, B. X. Tran, C. Hwang và J. I. Hong. “Programmable Dynamics of Exchange-Biased Domain Wall via Spin-Current-Induced Antiferromagnet Switching.” Advanced Science 8, 2100908 (2021).
8. Pham Van Vinh, Dang Duc Dung, Nguyen Bich Ngan và Tran Xuan Bao. “The Combination of Bipolar Electrolytic and Galvanic Method to Synthesize CuPt Nano-Alloy Electrocatalyst for Direct Ethanol Fuel Cell.” Journal of Electronic Materials 48, 6176–6182 (2019).